半導体装置及び半導体装置用バンプ

Semiconductor device and bump therefor

Abstract

PURPOSE: To enable solder to be less eaten up by a method wherein a bump of pure platinum or platinum alloy is connected to an aluminum electrode or an aluminum alloy electrode and bonded to a board electrode or a lead electrode through the intermediary of tin or tin alloy. CONSTITUTION: A bump 14 of pure platinum or platinum alloy is connected to an aluminum electrode or an aluminum alloy electrode 11 formed on a semiconductor chip 10 and bonded to art electrode 16 of a board 15 through the intermediary of low-melting point metal such as tin or tin alloy. Platinum has a higher fusing point than gold and is mutually diffused into each other at a joint in a performance test carried out at a high temperature when it is bonded to another metal. By this setup, even if alloy of tin and lead is formed, platinum is comparatively high in thermal stability as compared with gold and excellent in bonding reliability, so that a bump-bonded structure where solder is less eaten up can be realized. High-melting point metal as bump metal other than platinum is not enough in bonding properties to an aluminum electrode, and if metal is susceptible to oxidation, it is not good enough in bonding properties. COPYRIGHT: (C)1996,JPO
(57)【要約】 【目的】 半田くわれを有効に減少し得る半導体装置及 び半導体装置用バンプ等を提供する。 【構成】 半導体チップ10上に形成したアルミニウム 電極11もしくはアルミニウム合金電極上に、純白金も しくは白金合金から成るバンプが接続され、基板電極1 6又はリード電極に対して錫もしくは錫鉛合金等の低融 点金属を介して、バンプを接続するようにしたものであ る。アルミニウム電極11もしくはアルミニウム合金電 極上に、チタン,ニッケル,チタン−タングステン合 金,クロム及び銅等の少なくとも1種から成り、その膜 厚が0.001ミクロン以上、1ミクロン以下の薄膜が 形成され、この薄膜上にバンプが形成される。

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Cited By (8)

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    GB-2442391-AApril 02, 2008Advanced Micro Devices IncLead-free semiconductor package
    GB-2442391-BDecember 08, 2010Advanced Micro Devices IncLead-free semiconductor package
    US-7009299-B2March 07, 2006Agere Systems, Inc.Kinetically controlled solder
    US-7215030-B2May 08, 2007Advanced Micro Devices, Inc.Lead-free semiconductor package
    US-7242099-B2July 10, 2007Megica CorporationChip package with multiple chips connected by bumps
    US-7901997-B2March 08, 2011Shinko Electric Industries Co., Ltd.Method of manufacturing semiconductor device
    WO-2007001598-A2January 04, 2007Advanced Micro Devices, Inc.Lead-free semiconductor package
    WO-2007001598-A3March 15, 2007Advanced Micro Devices Inc, Raj N Master, Srinivasan Ashok Annad, Srinivasan Parthasarathy, Yew Cheong MuiLead-free semiconductor package